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00000nam2a22000003is4500 |
| 001 |
BY-NLB-br0001717236 |
| 005 |
20210910181636.0 |
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$a 20210910e19701970|||y0bely50 ba
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$a eng
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| 105 |
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$a a ||||000yy
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| 200 |
1 |
# |
$a High-power semiconductor devices
$f [guest editors: I. A. Lesk, James McCall, T. C. New]
|
| 210 |
# |
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$a [S. l.
$c s. n.
$d 1970]
|
| 215 |
# |
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$a С. 645―818
$c іл.
$d 29 см
|
| 225 |
2 |
# |
$a IEEE transactions on electron devices
$v vol. 17, № 9
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| 300 |
# |
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$a Выхадныя даныя арыгінала: New York : Institute of Electrical and Electronics Engineers, 1970
|
| 320 |
# |
# |
$a Бібліяграфія ў канцы артыкулаў
|
| 461 |
# |
1 |
$1 001BY-NLB-br284278
$1 2001
$v 1970,Vol.17,№9
|
| 517 |
0 |
# |
$a Special issue on high-power semiconductor devices
|
| 702 |
# |
1 |
$a Lesk
$b I. A.
$4 340
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| 702 |
# |
1 |
$a McCall
$b J.
$g James
$4 340
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| 702 |
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1 |
$a New
$b T. C.
$4 340
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| 801 |
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