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00000nam2a22000003is4500 |
| 001 |
BY-NLB-br0001800275 |
| 005 |
20221108135036.0 |
| 100 |
# |
# |
$a 20221108e19701970|||y0bely50 ba
|
| 101 |
0 |
# |
$a eng
|
| 105 |
# |
# |
$a a ||||000yy
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| 200 |
1 |
# |
$a Electrical behaviour of defects at a thermally oxidized silicon surface
$e thesis, Technological University Eindhoven, October 1970
$f by M. V. Whelan
|
| 210 |
# |
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$a [S. l.
$c s. n.
$d 1970]
|
| 215 |
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$a [6], 93 с.
$c іл.
$d 23 см
|
| 225 |
2 |
# |
$a Philips research reports
$i Supplements
$v 1970, № 6
|
| 300 |
# |
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$a Выхадныя даныя арыгінала: Eindhoven : Philips Research Laboratories, 1970
|
| 320 |
# |
# |
$a Бібліяграфія ў канцы раздзелаў
|
| 461 |
# |
1 |
$1 001BY-NLB-br293433
$1 2001
$v 1970,№6
|
| 700 |
# |
1 |
$a Whelan
$b M. V.
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| 801 |
# |
0 |
$a BY
$b BY-HM0000
$c 20221108
$g RCR
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