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00000nam2a22000003is4500 |
| 001 |
BY-NLB-br0001717570 |
| 005 |
20210913173712.0 |
| 100 |
# |
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$a 20210913d1995 |||y0bely50 ba
|
| 101 |
0 |
# |
$a eng
|
| 102 |
# |
# |
$a US
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| 105 |
# |
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$a ac ||||000yy
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| 200 |
1 |
# |
$a Bipolar BiCMOS/CMOS devices and technologies
$f [guest editors: Hiroshi Iwai, C. R. Selvakumar, K. Shenai]
|
| 210 |
# |
# |
$a New York
$c Institute of Electrical and Electronics Engineers
$d 1995
|
| 215 |
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$a С. 373―574
$c іл.
$d 28 см
|
| 225 |
2 |
# |
$a IEEE transactions on electron devices
$x 0018-9383
$v vol. 42, № 3
|
| 320 |
# |
# |
$a Бібліяграфія ў канцы артыкулаў
|
| 461 |
# |
1 |
$1 001BY-NLB-br284278
$1 2001
$v 1995,Vol.42,№3
|
| 517 |
0 |
# |
$a Special issue on bipolar BiCMOS/CMOS devices and technologies
|
| 702 |
# |
1 |
$a Iwai Hiroshi
$4 340
|
| 702 |
# |
1 |
$a Selvakumar
$b C. R.
$4 340
|
| 702 |
# |
1 |
$a Shenai
$b K.
$g Krishna
$4 340
|
| 801 |
# |
0 |
$a BY
$b BY-HM0000
$c 20210913
$g RCR
|
