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00000nam2a22000003is4500 |
| 001 |
BY-NLB-br0001717563 |
| 005 |
20210913163455.0 |
| 100 |
# |
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$a 20210913d1980 |||y0bely50 ba
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| 101 |
0 |
# |
$a eng
|
| 102 |
# |
# |
$a US
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| 105 |
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# |
$a ac ||||000yy
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| 200 |
1 |
# |
$a Characterization techniques for semiconductor materials, processes, and devices
$f [guest editors: Martin G. Buehler, W. Murray Bullis]
|
| 210 |
# |
# |
$a New York
$c Institute of Electrical and Electronics Engineers
$d 1980
|
| 215 |
# |
# |
$a С. 2203―2321, 32
$c іл.
$d 28 см
|
| 225 |
2 |
# |
$a IEEE transactions on electron devices
$x 0018-9383
$v vol. 27, № 12
|
| 320 |
# |
# |
$a Бібліяграфія ў канцы артыкулаў
|
| 461 |
# |
1 |
$1 001BY-NLB-br284278
$1 2001
$v 1980,Vol.27,№12
|
| 517 |
0 |
# |
$a Special issue on characterization techniques for semiconductor materials, processes, and devices
|
| 702 |
# |
1 |
$a Buehler
$b Martin G.
$4 340
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| 702 |
# |
1 |
$a Bullis
$b W. Murray
$4 340
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| 801 |
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$a BY
$b BY-HM0000
$c 20210913
$g RCR
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