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00000nam2a22000003is4500 |
| 001 |
BY-NLB-br0001717511 |
| 005 |
20210913153304.0 |
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# |
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$a 20210913d1979 |||y0bely50 ba
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# |
$a eng
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# |
$a US
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$a ac ||||000yy
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1 |
# |
$a Semiconductor memory
$f [guest editors: George E. Smith, Sunlin Chou, William H. Herndon]
|
| 210 |
# |
# |
$a New York
$c Institute of Electrical and Electronics Engineers
$d 1979
|
| 215 |
# |
# |
$a С. 825―1004
$c іл.
$d 28 см
|
| 225 |
2 |
# |
$a IEEE transactions on electron devices
$x 0018-9383
$v vol. 26, № 6
|
| 320 |
# |
# |
$a Бібліяграфія ў канцы артыкулаў
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| 461 |
# |
1 |
$1 001BY-NLB-br284278
$1 2001
$v 1979,Vol.26,№6
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| 517 |
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# |
$a Special issue on semiconductor memory
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| 702 |
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1 |
$a Smith
$b George E.
$4 340
|
| 702 |
# |
1 |
$a Chou Sunlin
$4 340
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| 702 |
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1 |
$a Herndon
$b William H.
$4 340
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$b BY-HM0000
$c 20210913
$g RCR
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