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00000nam2a22000003is4500 |
| 001 |
BY-NLB-br0001717506 |
| 005 |
20210913152032.0 |
| 100 |
# |
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$a 20210913d1978 |||y0bely50 ba
|
| 101 |
0 |
# |
$a eng
|
| 102 |
# |
# |
$a US
|
| 105 |
# |
# |
$a ac ||||000yy
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| 200 |
1 |
# |
$a SOS technology and nonvolatile memory technology
$f [guest editors: F. B. Micheletti, J. Ronald Cricchi, H. A. Richard Wegner]
|
| 210 |
# |
# |
$a New York
$c Institute of Electrical and Electronics Engineers
$d 1978
|
| 215 |
# |
# |
$a С. 857―1085
$c іл.
$d 28 см
|
| 225 |
2 |
# |
$a IEEE transactions on electron devices
$v vol. 25, № 8
|
| 320 |
# |
# |
$a Бібліяграфія ў канцы артыкулаў
|
| 461 |
# |
1 |
$1 001BY-NLB-br284278
$1 2001
$v 1978,Vol.25,№8
|
| 517 |
0 |
# |
$a Special issue on SOS technology and nonvolatile memory technology
|
| 517 |
0 |
# |
$a Nonvolatile memory technology
|
| 702 |
# |
1 |
$a Micheletti
$b F. B.
$4 340
|
| 702 |
# |
1 |
$a Cricchi
$b J. Ronald
$4 340
|
| 702 |
# |
1 |
$a Wegner
$b H. A. Richard
$4 340
|
| 801 |
# |
0 |
$a BY
$b BY-HM0000
$c 20210913
$g RCR
|
