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00000nam2a22000003is4500 |
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BY-NLB-br0001717437 |
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20210913130840.0 |
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$a 20210913d1976 |||y0bely50 ba
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$a eng
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# |
# |
$a US
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| 105 |
# |
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$a ac ||||000yy
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1 |
# |
$a High-power semiconductor devices
$f [guest editors: Richard A. Kokosa, Daniel R. Muss]
|
| 210 |
# |
# |
$a New York
$c Institute of Electrical and Electronics Engineers
$d 1976
|
| 215 |
# |
# |
$a С. 795―993
$c іл.
$d 28 см
|
| 225 |
2 |
# |
$a IEEE transactions on electron devices
$v vol. 23, № 8
|
| 320 |
# |
# |
$a Бібліяграфія ў канцы артыкулаў
|
| 461 |
# |
1 |
$1 001BY-NLB-br284278
$1 2001
$v 1976,Vol.23,№8
|
| 517 |
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# |
$a Special issue on high-power semiconductor devices
|
| 702 |
# |
1 |
$a Kokosa
$b Richard A.
$4 340
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| 702 |
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1 |
$a Muss
$b Daniel R.
$4 340
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