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00000nam2a22000003is4500 |
| 001 |
BY-NLB-br0001717209 |
| 005 |
20210910171924.0 |
| 100 |
# |
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$a 20210910e19681968|||y0bely50 ba
|
| 101 |
0 |
# |
$a eng
|
| 105 |
# |
# |
$a a ||||000yy
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| 200 |
1 |
# |
$a MIS issue
$f [guest editor: George Warfield]
|
| 210 |
# |
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$a [S. l.
$c s. n.
$d 1968]
|
| 215 |
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$a С. 951―1023
$c іл.
$d 29 см
|
| 225 |
2 |
# |
$a IEEE transactions on electron devices
$v vol. 15, № 12
|
| 300 |
# |
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$a Выхадныя даныя арыгінала: New York : Institute of Electrical and Electronics Engineers, 1968
|
| 320 |
# |
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$a Бібліяграфія: с. 951―954 (158 назв.), бібліяграфія ў канцы артыкулаў
|
| 461 |
# |
1 |
$1 001BY-NLB-br284278
$1 2001
$v 1968,Vol.15,№12
|
| 517 |
0 |
# |
$a Special MIS issue
|
| 517 |
0 |
# |
$a Metal-insulator-semiconductor issue
|
| 702 |
# |
1 |
$a Warfield
$b G.
$g George
$4 340
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| 801 |
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0 |
$a BY
$b BY-HM0000
$c 20210910
$g RCR
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