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$a 20210906d1994 |||y0bely50 ba
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$a eng
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$a US
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$a ac ||||000yy
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$a Strained-layer optoelectronic materials and devices
$f [guest editors: James J. Coleman, Barry I. Miller]
|
210 |
# |
# |
$a New York
$c Institute of Electrical and Electronics Engineers
$d 1994
|
215 |
# |
# |
$a С. [2], 219―630
$c іл.
$d 28 см
|
225 |
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# |
$a IEEE journal of quantum electronics
$x 0018-9197
$v vol. 30, № 2
|
320 |
# |
# |
$a Бібліяграфія ў канцы артыкулаў
|
461 |
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$1 001BY-NLB-br292669
$1 2001
$v 1994,Vol.30,№2
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$a Special issue on strained-layer optoelectronic materials and devices
|
702 |
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$a Coleman
$b James J.
$4 340
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$a Miller
$b Barry I.
$4 340
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