MOS Field-Effect Transistors and Integrated Circuits / Paul Richman
Сохранено в:
| Вид документа: | |
|---|---|
| Автор: | Richman, Paul |
| Опубликовано: | New York [etc.] : John Wiley & Sons , 1973 |
| Физические характеристики: |
259 p.
|
| Язык: | Английский |
| 00000nam0a22000003ib4500 | |||
| 001 | BY-NLB-br0001279552 | ||
| 005 | 20160331134204.0 | ||
| 100 | # | # | $a 20160331d1973 |||||bel|50 ba |
| 101 | 0 | # | $a eng |
| 200 | 1 | # | $a MOS Field-Effect Transistors and Integrated Circuits $f Paul Richman |
| 210 | # | # | $a New York [etc.] $c John Wiley & Sons $d 1973 |
| 215 | # | # | $a 259 p. |
| 700 | # | 1 | $a Richman $b Paul |
| 801 | # | 0 | $a BY $b BY-HM0000 $c 20160331 $g psbo |