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00000nam2a22000003is4500 |
| 001 |
BY-NLB-br0001717567 |
| 005 |
20210913170927.0 |
| 100 |
# |
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$a 20210913d1991 |||y0bely50 ba
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| 101 |
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# |
$a eng
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| 102 |
# |
# |
$a US
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| 105 |
# |
# |
$a ac ||||000yy
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| 200 |
1 |
# |
$a High-voltage and power integrated circuits and devices
$f [guest editor: M. Ayman Shibib]
|
| 210 |
# |
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$a New York
$c Institute of Electrical and Electronics Engineers
$d 1991
|
| 215 |
# |
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$a С. 1565―1684
$c іл.
$d 28 см
|
| 225 |
2 |
# |
$a IEEE transactions on electron devices
$x 0018-9383
$v vol. 38, № 7
|
| 320 |
# |
# |
$a Бібліяграфія ў канцы артыкулаў
|
| 461 |
# |
1 |
$1 001BY-NLB-br284278
$1 2001
$v 1991,Vol.38,№7
|
| 517 |
0 |
# |
$a Special issue on high-voltage and power integrated circuits and devices
|
| 702 |
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1 |
$a Shibib
$b M. Ayman
$4 340
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| 801 |
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$a BY
$b BY-HM0000
$c 20210913
$g RCR
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