
Controlling the Physical Properties of Semiconductors by Isovalent Impurity Doping
Сохранено в:
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Автор: | Shmartsev, Yu. V. |
Опубликовано: | Leningrad , 1990 |
Физические характеристики: |
30 р.
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Язык: | Английский |
Серия: |
Preprint
№ 1458 |
00000cam0a22000003ib4500 | |||
001 | BY-NLB-br0001399388 | ||
005 | 20170714132008.0 | ||
100 | # | # | $a 20170714d1990 |||||bel|50 ba |
101 | 0 | # | $a eng |
102 | # | # | $a RU |
200 | 1 | # | $a Controlling the Physical Properties of Semiconductors by Isovalent Impurity Doping |
210 | # | # | $a Leningrad $d 1990 |
215 | # | # | $a 30 р. |
225 | 1 | # | $a Preprint $v № 1458 |
700 | # | 1 | $a Shmartsev $b Yu. V. |
801 | # | 0 | $a BY $b BY-HM0000 $c 20170714 $g psbo |